IPD135N08N3GBTMA1
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INFINEON IPD135N08N3GBTMA1

Manufacturer No:

IPD135N08N3GBTMA1

Manufacturer:

INFINEON

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 13.5m ? @ 45A, 10V ±20V 1730pF @ 40V 25nC @ 10V 80V TO-252-3, DPak (2 Leads + Tab), SC-63

Delivery:

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Payment:

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In Stock :Available

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IPD135N08N3GBTMA1 information

INFINEON IPD135N08N3GBTMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPD135N08N3GBTMA1.

TypeParameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS?
Published
2011
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13.5m ? @ 45A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33?A
Input Capacitance (Ciss) (Max) @ Vds
1730pF @ 40V
Current - Continuous Drain (Id) @ 25°C
45A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Drain to Source Voltage (Vdss)
80V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
45A
Drain-source On Resistance-Max
0.0135Ohm
Pulsed Drain Current-Max (IDM)
180A
DS Breakdown Voltage-Min
80V
Avalanche Energy Rating (Eas)
50 mJ
RoHS Status
RoHS Compliant

User Guide

PURCHASE

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IMPORTANT NOTICE

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