INFINEON IPD075N03LGATMA1
Manufacturer No:
IPD075N03LGATMA1
Manufacturer:
INFINEON
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 7.5m ? @ 30A, 10V ±20V 1900pF @ 15V 18nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :1668
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IPD075N03LGATMA1 Information
INFINEON IPD075N03LGATMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPD075N03LGATMA1.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- OptiMOS?
- Published
- 1999
- Type
- Parameter
- JESD-609 Code
- e3
- Pbfree Code
- no
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Additional Feature
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
Download datasheets and manufacturer documentation for INFINEON IPD075N03LGATMA1.
Other Related Documents:
ConflictMineralStatement:
IPD075N03LGATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 50 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 30V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IPD075N03LGATMA1 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 30V voltage
IPD075N03LGATMA1 Applications
There are a lot of Infineon Technologies
IPD075N03LGATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
