INFINEON IPB60R180P7

Manufacturer No:

IPB60R180P7

Manufacturer:

INFINEON

Package:

Description:

Quantity:

In Stock :2752

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 22 - Sat, May 23, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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Step4：Individual Package

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SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IPB60R180P7 Information

INFINEON IPB60R180P7 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPB60R180P7.

Type
Parameter

Continuous Drain Current
18(A)

Drain-Source On-Volt
600(V)

Operating Temperature Classification
Military

Operating Temp Range
-55C to 150C

Gate-Source Voltage (Max)
20(V)

Channel Mode
Enhancement

Rad Hardened
No

Type
Power MOSFET

Number of Elements
1

Polarity
N

Type
Parameter

Power Dissipation
72(W)

Download datasheets and manufacturer documentation for INFINEON IPB60R180P7.

Product Description:

The IPB60R180P7 is a high-power, high-voltage, enhancement-mode power MOSFET from Infineon, designed for use in demanding applications where reliability and performance are critical. This discrete semiconductor product is a single-channel MOSFET with a power dissipation of 72W, making it suitable for a wide range of power management and switching applications.

Features:

High-power dissipation of 72W
High-voltage capability with a gate-source voltage of 20V
Enhancement-mode channel operation for improved efficiency and reliability
High-temperature operation from -55°C to 150°C, making it suitable for military and aerospace applications
High-drain-source on-voltage of 600V for reliable switching and protection
Continuous drain current of 18A for high-current applications

Applications:

Primary applications:
- Power management and switching in aerospace and defense systems
- High-power motor control and drive applications
- High-voltage power supplies and converters
Secondary applications:
- Power conversion and inversion in renewable energy systems
- High-power audio amplifiers and speakers
- High-voltage lighting and signage applications

Alternative Parts:

IPB60R180P7 is a high-power MOSFET with a power dissipation of 72W. Alternative parts with similar specifications include:
- IPB60R180P6 (72W, 20V, -55°C to 150°C)
- IPB60R180P5 (72W, 20V, -40°C to 125°C)
- IPB60R180P4 (72W, 20V, -25°C to 100°C)

Embedded Modules:

This product is not typically used as a standalone component, but rather as a discrete semiconductor device in various embedded modules and systems. Some examples include:
- High-power motor control modules
- High-voltage power supply modules
- High-power audio amplifier modules

FAQs:

Q: What is the maximum power dissipation of the IPB60R180P7? A: The maximum power dissipation is 72W.

Q: What is the operating temperature range of the IPB60R180P7? A: The operating temperature range is -55°C to 150°C.

Q: Is the IPB60R180P7 suitable for high-voltage applications? A: Yes, the IPB60R180P7 is designed for high-voltage applications with a gate-source voltage of 20V.

Q: Can the IPB60R180P7 be used in aerospace and defense applications? A: Yes, the IPB60R180P7 is suitable for military and aerospace applications due to its high-temperature operation and reliable performance.