

INFINEON IPB100N06S3L-03
Manufacturer No:
IPB100N06S3L-03
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.7m ? @ 80A, 10V ±16V 26240pF @ 25V 550nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :4334
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IPB100N06S3L-03 Information
INFINEON IPB100N06S3L-03 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPB100N06S3L-03.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- OptiMOS?
- Published
- 2004
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- MATTE TIN
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 55V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
Download datasheets and manufacturer documentation for INFINEON IPB100N06S3L-03.
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IPB100N06S3L-03 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 690 mJ.The maximum input capacitance of this device is 26240pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 400A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (5V 10V), this device helps reduce its power consumption.
IPB100N06S3L-03 Features
the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 400A.
IPB100N06S3L-03 Applications
There are a lot of Infineon Technologies
IPB100N06S3L-03 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IPB100N06S3L-03 Relevant information
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