

INFINEON IPAN70R450P7SXKSA1
Manufacturer No:
IPAN70R450P7SXKSA1
Manufacturer:
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 450m ? @ 2.3A, 10V ±16V 424pF @ 400V 13.1nC @ 10V 700V TO-220-3 Full Pack
Quantity:


In Stock :5518
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IPAN70R450P7SXKSA1 Information
INFINEON IPAN70R450P7SXKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPAN70R450P7SXKSA1.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Tube
- Series
- CoolMOS? P7
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Type
- Parameter
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Power Dissipation-Max
- 22.7W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 450m ? @ 2.3A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 120?A
- Input Capacitance (Ciss) (Max) @ Vds
- 424pF @ 400V
- Current - Continuous Drain (Id) @ 25°C
- 10A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 13.1nC @ 10V
- Drain to Source Voltage (Vdss)
- 700V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
Download datasheets and manufacturer documentation for INFINEON IPAN70R450P7SXKSA1.
Datasheets:
ConflictMineralStatement:
IPAN70R450P7SXKSA1 Description
Cool MOStw is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle andoioneered by Infineon Technologies.The latest Cool MOSi P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter.ighting, IV etc.The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
IPAN70R450P7SXKSA1 Features
?Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss
?Excellent thermal behavior
?Integrated ESD protection diode
?Low switching losses(Eoss)
?Product validationacc.JEDEC Standard
IPAN70R450P7SXKSA1 Applications
n Low Noise Bipolar/Inverting Supplies
n Industrial/Instrumentation Low Noise Bias
Generators
n Portable Medical Equipment
n Portable Instruments
IPAN70R450P7SXKSA1 Relevant information
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