

INFINEON IPA65R190C7XKSA1
Manufacturer No:
IPA65R190C7XKSA1
Manufacturer:
Package:
TO-220-3 Full Pack
Description:
N-Channel Tube 190m Ω @ 5.7A, 10V ±20V 1150pF @ 400V 23nC @ 10V TO-220-3 Full Pack
Quantity:


In Stock :4755
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IPA65R190C7XKSA1 Information
INFINEON IPA65R190C7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPA65R190C7XKSA1.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 8A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 30W Tc
- Type
- Parameter
- Turn Off Delay Time
- 54 ns
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- CoolMOS™ C7
- Published
- 2008
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- Tin (Sn)
Download datasheets and manufacturer documentation for INFINEON IPA65R190C7XKSA1.
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IPA65R190C7XKSA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 57 mJ (Eas).Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1150pF @ 400V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8A amps.A device can conduct a maximum continuous current of [8A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 49A.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 650V, it can support the maximum dual supply voltage.
IPA65R190C7XKSA1 Features
the avalanche energy rating (Eas) is 57 mJ
a continuous drain current (ID) of 8A
based on its rated peak drain current 49A.
IPA65R190C7XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R190C7XKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
IPA65R190C7XKSA1 Relevant information
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