

INFINEON IPA65R110CFDXKSA1
Manufacturer No:
IPA65R110CFDXKSA1
Manufacturer:
Package:
TO-220-3 Full Pack
Description:
N-Channel Tube 110m Ω @ 12.7A, 10V ±20V 3240pF @ 100V 118nC @ 10V 650V TO-220-3 Full Pack
Quantity:


In Stock :3792
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IPA65R110CFDXKSA1 Information
INFINEON IPA65R110CFDXKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPA65R110CFDXKSA1.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Contact Plating
- Tin
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Surface Mount
- NO
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 31.2A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Number of Elements
- 1
- Type
- Parameter
- Power Dissipation (Max)
- 34.7W Tc
- Turn Off Delay Time
- 68 ns
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- CoolMOS™
- Published
- 2008
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
Download datasheets and manufacturer documentation for INFINEON IPA65R110CFDXKSA1.
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IPA65R110CFDXKSA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 845 mJ (Eas).Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3240pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 31.2A amps.In this device, the drain-source breakdown voltage is 700V and VGS=700V, so the drain-source breakdown voltage is 700V in this case.As far as peak drain current is concerned, its maximum pulsed current is 99.6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 650V drain to source voltage (Vdss).
IPA65R110CFDXKSA1 Features
the avalanche energy rating (Eas) is 845 mJ
a continuous drain current (ID) of 31.2A
a drain-to-source breakdown voltage of 700V voltage
based on its rated peak drain current 99.6A.
a 650V drain to source voltage (Vdss)
IPA65R110CFDXKSA1 Applications
There are a lot of Infineon Technologies
IPA65R110CFDXKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
IPA65R110CFDXKSA1 Relevant information
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