INFINEON IPA65R095C7XKSA1

Manufacturer No:

IPA65R095C7XKSA1

Manufacturer:

INFINEON

Package:

TO-220-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel Tube 95m ? @ 11.8A, 10V ±20V 2140pF @ 400V 45nC @ 10V TO-220-3 Full Pack

Quantity:

In Stock :6003

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 10 - Mon, May 11, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IPA65R095C7XKSA1 Information

INFINEON IPA65R095C7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPA65R095C7XKSA1.

Type
Parameter

Factory Lead Time
18 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
CoolMOS? C7

Published
2008

Type
Parameter

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Terminal Finish
Tin (Sn)

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Number of Elements
1

Download datasheets and manufacturer documentation for INFINEON IPA65R095C7XKSA1.

Datasheets:

infineontechnologies-ipa65r095c7xksa1-datasheets-9979.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IPA65R095C7XKSA1 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 118 mJ.The maximum input capacitance of this device is 2140pF @ 400V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 100A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 650V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.

IPA65R095C7XKSA1 Features

the avalanche energy rating (Eas) is 118 mJ
a continuous drain current (ID) of 12A
the turn-off delay time is 60 ns
based on its rated peak drain current 100A.