INFINEON IPA60R299CPXKSA1
Manufacturer No:
IPA60R299CPXKSA1
Manufacturer:
INFINEON
Package:
TO-220-3 Full Pack
Description:
N-Channel Tube 299m Ω @ 6.6A, 10V ±20V 1100pF @ 100V 29nC @ 10V 600V TO-220-3 Full Pack
Quantity:
In Stock :7532
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Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 14 - Mon, Jun 15, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IPA60R299CPXKSA1 Information
INFINEON IPA60R299CPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPA60R299CPXKSA1.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 11A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 33W Tc
- Operating Temperature
- -55°C~150°C TJ
- Type
- Parameter
- Packaging
- Tube
- Series
- CoolMOS™
- Published
- 2008
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- Tin (Sn)
- Terminal Position
- SINGLE
Download datasheets and manufacturer documentation for INFINEON IPA60R299CPXKSA1.
Other Related Documents:
IPA60R299CPXKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 290 mJ.The maximum input capacitance of this device is 1100pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 11A.There is no pulsed drain current maximum for this device based on its rated peak drain current 34A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.
IPA60R299CPXKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 34A.
a 600V drain to source voltage (Vdss)
IPA60R299CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R299CPXKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
