Texas Instruments INA630DDFR
Manufacturer No:
INA630DDFR
Manufacturer:
Texas Instruments
Package:
Description:
Precision, low-power, indirect current feedback instrumentation amplifier
Quantity:
In Stock :3631
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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INA630DDFR Information
Texas Instruments INA630DDFR technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments INA630DDFR.
- Type
- Parameter
- Number of channels
- 1
- Vs (max) (V)
- 36
- Vs (min) (V)
- 4.5
- Input offset (±) (max) (µV)
- 250
- Voltage gain (min) (V/V)
- 20
- Voltage gain (max) (V/V)
- 1000
- Noise at 1 kHz (typ) (nV√Hz)
- 40
- Features
- Super Beta
- CMRR (min) (dB)
- 130
- Input offset drift (±) (max) (µV/°C)
- 2
- Type
- Parameter
- Input bias current (±) (max) (nA)
- 10
- Iq (typ) (mA)
- 0.3
- Bandwidth at min gain (typ) (MHz)
- 0.55
- Gain error (±) (max) (%)
- 0.1
- Operating temperature range (°C)
- -40 to 125
- Rating
- Catalog
- Type
- Resistor
- Gain nonlinearity (±) (max) (%)
- 0.001
- Input common mode headroom (to negative supply) (typ) (V)
- 1.5
- Input common mode headroom (to positive supply) (typ) (V)
- -1.5
Download datasheets and manufacturer documentation for Texas Instruments INA630DDFR.
Product overview:
EVM User's guide:
Data sheet:
The INA630 is a high-precision instrumentation amplifier that offers low power consumption and operates over a wide single-supply or dual-supply range. The INA630 is optimized for small differential voltages (±125mV maximum) while providing excellent common-mode suppression (126dB CMRR). The INA630 offers flexible gain setting with an external resistor divider of minimum G = 20V/V.
The INA630 is based on an indirect current feedback architecture that offers low gain error and non-linearity. Due to the architecture the reference pin impedance does not degrade the CMRR performance. The device enables wider input and output voltage range compared to traditional instrumentation amplifiers. The device has high precision as a result of super-beta input transistors, which provide low input offset voltage, offset voltage drift, low bias current and current noise.
- Optimized for cost and size sensitive applications
- Super-beta bipolar precision:
- High common-mode rejection: 126dB (minimum) for G = 20V/V to 1000V/V
- Low offset voltage: 60µV (typical), 350µV (maximum)
- Low offset voltage drift: 0.7µV/°C (typical), 2µV/°C (maximum)
- Low gain non-linearity: 10ppm (G = 100V/V) (maximum)
- High power supply rejection: 123dB (minimum) for G = 20V/V to 1000V/V
- Voltage noise density: 40nV/√Hz at f = 1kHz
- Gain set with external resistor divider for G ≥ 20V/V
- Maximum differential input voltages of ±125mV
- Bandwidth: 550kHz (G = 20), 100kHz (G = 100)
- Supply range:
- Single-supply: 4.5V to 36V
- Dual-supply: ±2.25V to ±18V
- Supply current: 300µA (typical)
- Specified temperature range: –40°C to +125°C
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12.28 M
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