INFINEON IMBG120R030M1HXTMA1

Manufacturer No:

IMBG120R030M1HXTMA1

Manufacturer:

INFINEON

Package:

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Description:

SiCFET (Silicon Carbide) N-Channel 41mOhm @ 25A, 18V +18V, -15V 2290 pF @ 800 V 63 nC @ 18 V 1200 V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Quantity:

In Stock :4688

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

Payment

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Authenticity Guarantee

All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

Quality Assurance

Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.

RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IMBG120R030M1HXTMA1 Information

INFINEON IMBG120R030M1HXTMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IMBG120R030M1HXTMA1.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Supplier Device Package
PG-TO263-7-12

Mfr
Infineon Technologies

Package
Digi-Reel?

Product Status
Active

Power Dissipation (Max)
300W (Tc)

Base Product Number
IMBG120

Series
CoolSiC?

Operating Temperature
-55°C ~ 175°C (TJ)

Type
Parameter

Technology
SiCFET (Silicon Carbide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
41mOhm @ 25A, 18V

Vgs(th) (Max) @ Id
5.7V @ 11.5mA

Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 800 V

Current - Continuous Drain (Id) @ 25°C
56A (Tc)

Gate Charge (Qg) (Max) @ Vgs
63 nC @ 18 V

Drain to Source Voltage (Vdss)
1200 V

Vgs (Max)
+18V, -15V

FET Feature
Standard

Download datasheets and manufacturer documentation for INFINEON IMBG120R030M1HXTMA1.

IMBG120R030M1HXTMA1 Overview

A device's maximal input capacitance is 2290 pF @ 800 V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 1200 V drain to source voltage (Vdss).