INFINEON IKP40N65F5XKSA1
Manufacturer No:
IKP40N65F5XKSA1
Manufacturer:
Package:
TO-220-3
Description:
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-220 Tube
Quantity:
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IKP40N65F5XKSA1 Information
INFINEON IKP40N65F5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IKP40N65F5XKSA1.
- Type
- Parameter
- Factory Lead Time
- 26 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Collector-Emitter Breakdown Voltage
- 650V
- Test Conditions
- 400V, 20A, 15 Ω, 15V
- Operating Temperature
- -40°C~175°C TJ
- Packaging
- Tube
- Series
- TrenchStop®
- Type
- Parameter
- Published
- 2008
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Max Power Dissipation
- 255W
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for INFINEON IKP40N65F5XKSA1.
Datasheets:
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IKP40N65F5XKSA1 Description
When employing this Infineon Technologies IKP40N65F5XKSA1 IGBT transistor, don't be scared to increase the amps in your device. It features a collector-emitter voltage that can go as high as 650 V. It can dissipate up to 255000 mW of power. It is created in just one design. The operating temperature range for the IKP40N65F5XKSA1 IGBT transistor is -40 °C to 175 °C.
IKP40N65F5XKSA1 Features
Low Qg
650V breakdown voltage
Pb-free lead plating; RoHS compliant
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
IGBT co-packed with RAPID 1 fast and soft antiparallel diode
Best-in-Class efficiency in hard switching and resonant topologies
IKP40N65F5XKSA1 Applications
Industrial
Enterprise systems
Personal electronics
IKP40N65F5XKSA1 Relevant information
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