ONSEMI HUFA75823D3ST
Manufacturer No:
HUFA75823D3ST
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 150mOhm @ 14A, 10V ±20V 800pF @ 25V 54nC @ 20V 150V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :3896
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
HUFA75823D3ST Information
ONSEMI HUFA75823D3ST technical specifications, attributes, parameters and parts with similar specifications to ONSEMI HUFA75823D3ST.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- TO-252AA
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- UltraFET?
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 85W Tc
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 150mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 14A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 54nC @ 20V
- Drain to Source Voltage (Vdss)
- 150V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
Download datasheets and manufacturer documentation for ONSEMI HUFA75823D3ST.
Datasheets:
HUFA75823D3ST Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 800pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 150V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
HUFA75823D3ST Features
a 150V drain to source voltage (Vdss)
HUFA75823D3ST Applications
There are a lot of ON Semiconductor
HUFA75823D3ST applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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