Renesas HS9-4424DRH/PROTO
Manufacturer No:
HS9-4424DRH/PROTO
Manufacturer:
Renesas
Package:
Description:
Dual, Noninverting Power MOSFET Radiation Hardened Drivers
Quantity:
In Stock :9393
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
HS9-4424DRH/PROTO Information
Renesas HS9-4424DRH/PROTO technical specifications, attributes, parameters and parts with similar specifications to Renesas HS9-4424DRH/PROTO.
- Type
- Parameter
- Pkg. Type
- CFP
- Lead Count (#)
- 16
- Carrier Type
- Tray
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Pb (Lead) Free
- Exempt
- Pb Free Category
- Gold Plate over compliant Undercoat-e4
- MOQ
- 1
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- Driver Type
- Low Side
- Type
- Parameter
- Drivers (#)
- 2
- FET Type
- MOSFET
- Fall Time
- 75
- Flow
- RH Hermetic
- Input VCC (Max) (V)
- 18
- Input VCC (Min) (V)
- 8
- Length (mm)
- 10.4
- Low Side Fall Time (max) (ns)
- 75
- Low Side Rise Time (max) (ns)
- 75
- Output Type
- Non-inverting
Download datasheets and manufacturer documentation for Renesas HS9-4424DRH/PROTO.
The radiation hardened HS-4424 family are noninverting, dual, monolithic high-speed MOSFET drivers designed to convert low voltage control input signals into higher voltage, high current outputs. The HS-4424DRH, HS-4424DEH are fully tested across the 8V to 18V operating range. The inputs of these devices can be directly driven by the HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs in high-frequency applications. The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance. The output stage incorporates a low voltage lockout circuit that puts the outputs into a three-state mode when the supply voltage is below its Undervoltage Lockout (UVLO) threshold voltage. Constructed with Intersil’s dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments.
- Electrically screened to DLA SMD# 5962-99560
- QML qualified per MIL-PRF-38535 requirements
- Latch-up immune
- Radiation environment
- High dose rate (50-300rad(Si)/s): 300krad(Si)
- Low dose rate (0.01rad(Si)/s): 50krad(Si)*
*Limit established by characterization - IPEAK: >2A (minimum)
- Matched rise and fall times (CL = 4300pF): 75ns (maximum)
- Low voltage lockout feature: <8V
- Wide supply voltage range: 8V to 18V
- Propagation delay: 250ns (maximum)
- Consistent delay times with VCC changes
- Low power consumption
- 40mW with inputs high
- 20mW with inputs low
- Low equivalent input capacitance: 3.2pF (typical)
- ESD protected: >4kV
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12.28 M
Listed Part Number
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