Renesas HS9-4423EH-Q
Manufacturer No:
HS9-4423EH-Q
Manufacturer:
Renesas
Package:
Description:
Radiation Hardened Dual, Inverting Power MOSFET Driver
Quantity:
In Stock :3261
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
HS9-4423EH-Q Information
Renesas HS9-4423EH-Q technical specifications, attributes, parameters and parts with similar specifications to Renesas HS9-4423EH-Q.
- Type
- Parameter
- Pkg. Type
- CFP
- Lead Count (#)
- 16
- Carrier Type
- Tray
- Moisture Sensitivity Level (MSL)
- Not Applicable
- DLA SMD
- 5962F9951103VXC
- Pb (Lead) Free
- Exempt
- Pb Free Category
- Gold Plate over compliant Undercoat-e4
- MOQ
- 25
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- Type
- Parameter
- DSEE (MeV·cm2/mg)
- 60
- Driver Type
- Low Side
- Drivers (#)
- 2
- FET Type
- MOSFET
- Fall Time
- 75
- Flow
- RH Hermetic
- Input VCC (Max) (V)
- 18
- Input VCC (Min) (V)
- 12
- Length (mm)
- 10.4
- Low Side Fall Time (max) (ns)
- 95
Download datasheets and manufacturer documentation for Renesas HS9-4423EH-Q.
The Radiation Hardened HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current outputs at voltages up to 18V. The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs in high-frequency applications. The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance. The output stage incorporates a low voltage lock-out circuit that puts the outputs into a three-state mode when the supply voltage drops below 10V for the HS-4423RH, HS-4423EH and 7.5V for the HS-4423BRH and HS-4423BEH. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments.
- Electrically screened to DLA SMD # 5962-99511
- QML qualified per MIL-PRF-38535 requirements
- EH version acceptance tested to 50krad(Si) (LDR)
- Radiation environment
- High dose rate (50-300rad(Si)/s): 300krad(Si)
- Latch-up immune
- Low dose rate immune
- IPEAK: >2A (typ)
- Matched rise and fall times (CL = 4300pF):75ns (max)
- Low voltage lock-out feature
- HS-4423RH, HS-4423EH: <10.0V
- HS-4423BRH, HS-4423BEH: <7.5V
- Wide supply voltage range: 12V to 18V
- Prop delay: 250ns (max)
- Consistent delay times with VCC changes
- Low power consumption
- 40mW with inputs high
- 20mW with inputs low
- Low equivalent input capacitance: 3.2pF (typ)
- ESD protected: 4000V
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