Renesas HS54095TZ-E
Manufacturer No:
HS54095TZ-E
Manufacturer:
Renesas
Package:
TO-226-3, TO-92-3 Short Body
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 16.5 ? @ 100mA, 10V ±30V 66pF @ 25V 4.8nC @ 10V 600V TO-226-3, TO-92-3 Short Body
Quantity:
In Stock :6624
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
HS54095TZ-E Information
Renesas HS54095TZ-E technical specifications, attributes, parameters and parts with similar specifications to Renesas HS54095TZ-E.
- Type
- Parameter
- Factory Lead Time
- 26 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2009
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- BOTTOM
- Terminal Form
- WIRE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
Download datasheets and manufacturer documentation for Renesas HS54095TZ-E.
ConflictMineralStatement:
HS54095TZ-E Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 66pF @ 25V.This device conducts a continuous drain current (ID) of 200mA, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 0.2A.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
HS54095TZ-E Features
a continuous drain current (ID) of 200mA
a 600V drain to source voltage (Vdss)
HS54095TZ-E Applications
There are a lot of Renesas Electronics America
HS54095TZ-E applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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