Renesas HS1-303ARH-8
Manufacturer No:
HS1-303ARH-8
Manufacturer:
Renesas
Package:
Description:
Radiation Hardened CMOS Dual SPDT Analog Switch
Quantity:
In Stock :1748
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Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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HS1-303ARH-8 Information
Renesas HS1-303ARH-8 technical specifications, attributes, parameters and parts with similar specifications to Renesas HS1-303ARH-8.
- Type
- Parameter
- Pkg. Type
- SBDIP
- Lead Count (#)
- 14
- Carrier Type
- Tube
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Pitch (mm)
- 2.5
- Pkg. Dimensions (mm)
- 17.8 x 7.5 x 2.41
- DLA SMD
- 5962F9581304QCC
- Pb (Lead) Free
- Exempt
- Pb Free Category
- Gold Plate over compliant Undercoat-e4
- MOQ
- 25
- Type
- Parameter
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- DSEE (MeV·cm2/mg)
- DSEE Free (DI)
- Flow
- RH Hermetic
- Leakage Current (max, post-rad) (±nA)
- 100
- Length (mm)
- 17.8
- Qualification Level
- Class Q
- RON (max) (ohms)
- 70
- Rating
- Space
- Supply Current (max, post-rad)
- +150µA/-100µA
Download datasheets and manufacturer documentation for Renesas HS1-303ARH-8.
The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH, but offer improved 300kRAD(Si) total dose capability. These switches offer low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303ARH and HS-303AEH should be operated with nominal ±15V supplies, while the HS-303BRH and HS-303BEH should be operated with nominal ±12V supplies.
- Electrically screened to DLA SMD# 5962-95813
- QML, per MIL-PRF-38535
- Radiation performance
- Total dose: 3x105rad(Si)
- SEE: For LET = 60MeV•cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)
- No latch-up, dielectrically isolated device islands
- Pinout and functionally compatible with Renesas HS-303RH and HI-303 series analog switches
- Analog signal range equal to the supply voltage range
- Low leakage: 100nA (max, post-rad)
- Low rON: 70Ω (max, post-rad)
- Low standby supply current: +150μA/-100μA (max, post-rad)
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