Renesas HS1-1825AEH-Q
Manufacturer No:
HS1-1825AEH-Q
Manufacturer:
Renesas
Package:
Description:
Radiation Hardened High-speed, Dual Output PWM
Quantity:
In Stock :6892
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
HS1-1825AEH-Q Information
Renesas HS1-1825AEH-Q technical specifications, attributes, parameters and parts with similar specifications to Renesas HS1-1825AEH-Q.
- Type
- Parameter
- Pkg. Type
- SBDIP
- Lead Count (#)
- 16
- Carrier Type
- Tube
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Pitch (mm)
- 2.5
- Pkg. Dimensions (mm)
- 20.3 x 7.5 x 2.41
- DLA SMD
- 5962F9955802VEC
- Pb (Lead) Free
- Exempt
- Pb Free Category
- Gold Plate over compliant Undercoat-e4
- MOQ
- 25
- Type
- Parameter
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- Control Mode
- Voltage, Peak Current Mode
- DSEE (MeV·cm2/mg)
- 86.3
- Duty Cycle (Max) (%)
- 50
- Flow
- RH Hermetic
- Length (mm)
- 20.3
- No-Load Operating Current
- 25
- Operating Freq (Max) (MHz)
- 0.5
- Phase of Outputs
- Out of Phase
Download datasheets and manufacturer documentation for Renesas HS1-1825AEH-Q.
The radiation hardened HS-1825ARH, HS-1825AEH pulse width modulator is designed to be used in high-frequency switched-mode power supplies and can be used in either current-mode or voltage-mode. It is well suited for single-ended boost converter applications. Device features include a precision voltage reference, low power start-up circuit, high-frequency oscillator, wide-band error amplifier and fast current-limit comparator. The use of proprietary process capabilities and unique design techniques results in fast propagation delay times and high output current over a wide range of output voltages. Constructed with the Intersil radiation hardened Silicon Gate (RSG) Dielectric Isolation BiCMOS process, the HS-1825ARH, HS-1825AEH have been specifically designed to provide highly reliable performance when exposed to harsh radiation environments..
- Electrically screened to DLA SMD # 5962-99558
- QML qualified per MIL-PRF-38535 Requirements
- Radiation environment
- Maximum total dose: 300 krad(SI)
- Vertical architecture provides low dose rate immunity
- DI RSG process provides latch-up immunity
- Low start-up current: 100µA (Typical)
- Fast propagation delay: 80ns (Typical)
- 12V to 30V operation
- 1A (peak) dual output drive capability
- 5.1V reference
- Undervoltage lockout
- Programmable soft-start
- Switching frequencies to 500kHz
- Latched overcurrent comparator with full cycle restart
- Programmable leading edge blanking circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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