ONSEMI HGTP12N60C3
Manufacturer No:
HGTP12N60C3
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
Quantity:
In Stock :6680
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Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 8 - Tue, Jun 9, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
HGTP12N60C3 Information
ONSEMI HGTP12N60C3 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI HGTP12N60C3.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Tube
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Additional Feature
- LOW CONDUCTION LOSS
- HTS Code
- 8541.29.00.95
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- HGTP12N60
Download datasheets and manufacturer documentation for ONSEMI HGTP12N60C3.
HGTP12N60C3 Description
HGTP12N60C3 MOSFET can be described as a gated, high voltage switching device that blends the top characteristics of MOSFETs with bipolar transistors. These devices feature the higher input impedance that comes from a MOSFET and the lower conduction loss on-state of a bipolar transistor. It is ideal for numerous applications that require high voltage like AC or DC motor control power supplies and relay drivers for solenoids and contactors.
HGTP12N60C3 Features
24A, 600V at Tc = 25°C
600V Switching SOA Capability
Typical Fall Time
Short Circuit Rating
Low Conduction Loss
HGTP12N60C3 Applications
AC and DC motor controls
Power supplies
Drivers for solenoids
Relays
Contactors
HGTP12N60C3 MOSFET can be described as a gated, high voltage switching device that blends the top characteristics of MOSFETs with bipolar transistors. These devices feature the higher input impedance that comes from a MOSFET and the lower conduction loss on-state of a bipolar transistor. It is ideal for numerous applications that require high voltage like AC or DC motor control power supplies and relay drivers for solenoids and contactors.
HGTP12N60C3 Features
24A, 600V at Tc = 25°C
600V Switching SOA Capability
Typical Fall Time
Short Circuit Rating
Low Conduction Loss
HGTP12N60C3 Applications
AC and DC motor controls
Power supplies
Drivers for solenoids
Relays
Contactors
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)