ONSEMI HGTG30N60C3D
Manufacturer No:
HGTG30N60C3D
Manufacturer:
ONSEMI
Package:
TO-247-3
Description:
600V, PT IGBT
Quantity:
In Stock :9314
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step5：Anti-collision Filling
Step6：Packaging Box
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3. It may cost additional remote fees for delivery if you are in a remote area.
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
HGTG30N60C3D Information
ONSEMI HGTG30N60C3D technical specifications, attributes, parameters and parts with similar specifications to ONSEMI HGTG30N60C3D.
- Type
- Parameter
- Trr Typ (ns)
- 52
- Short Circuit Withstand (µs)
- -
- Container Type
- TUBE
- Family
- -
- V(BR)CES Typ (V)
- 600
- Eon Typ (mJ)
- -
- EAS Typ (mJ)
- -
- Package Type
- TO-247-3
- Case Outline
- 340CK
- VF Typ (V)
- -
- Type
- Parameter
- Gate Charge Typ (nC)
- -
- VCE(sat) Typ (V)
- 1.5
- Eoff Typ (mJ)
- -
- Irr Typ (A)
- -
- PD Max (W)
- -
- MSL Type
- NA
- MSL Temp (°C)
- 0
- Container Qty.
- 450
- IC Max (A)
- 30
- Co-Packaged Diode
- Yes
Download datasheets and manufacturer documentation for ONSEMI HGTG30N60C3D.
Datasheet:
Package Drawing:
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.
Application
- Other Industrial
Feature
- 63A, 600V, TC = 25°C
- Typical Fall Time: 230ns @ TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)