Rochester HGT1S7N60A4DS
Manufacturer No:
HGT1S7N60A4DS
Manufacturer:
Rochester
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
Quantity:
In Stock :8015
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
HGT1S7N60A4DS Information
Rochester HGT1S7N60A4DS technical specifications, attributes, parameters and parts with similar specifications to Rochester HGT1S7N60A4DS.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 2
- Terminal Finish
- MATTE TIN
- Additional Feature
- LOW CONDUCTION LOSS
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 4
- JESD-30 Code
- R-PSSO-G2
Download datasheets and manufacturer documentation for Rochester HGT1S7N60A4DS.
HGT1S7N60A4DS Description
The MOS gated high voltage switching devices HGTG7N60A4D, HGTP7N60A4D, and HGT1S7N60A4DS combine the finest properties of MOSFETs with bipolar transistors. HGTG7N60A4D, HGTP7N60A4D, and HGT1S7N60A4DS have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly. The TA49331 development type IGBT was used. The development type TA49370 diode is utilized in anti-parallel. This IGBT is suited for a variety of high-voltage switching applications with high frequencies and low conduction losses. HGT1S7N60A4DS is a high-frequency switch-mode power supply that has been optimized.
HGT1S7N60A4DS Features
>100kHz Operation At 390V, 7A
200kHz Operation At 390V, 5A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
Low Conduction Loss
Temperature Compensating SABER? Model
HGT1S7N60A4DS Applications
Power Management
Computers & Computer Peripherals
Portable Devices
Industrial
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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