

Renesas HAT2267H-EL-E
Manufacturer No:
HAT2267H-EL-E
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 16m ? @ 12.5A, 10V ±20V 2150pF @ 10V 30nC @ 10V SC-100, SOT-669
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HAT2267H-EL-E information
Renesas HAT2267H-EL-E technical specifications, attributes, parameters and parts with similar specifications to Renesas HAT2267H-EL-E.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Number of Pins
- 5
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 80V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 25A
- Time@Peak Reflow Temperature-Max (s)
- 20
- Pin Count
- 5
- JESD-30 Code
- R-PSSO-G4
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 25W Tc
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 7.5 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 16m ? @ 12.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 2150pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 25A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 30nC @ 10V
- Rise Time
- 9ns
- Drive Voltage (Max Rds On,Min Rds On)
- 6V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 5 ns
- Turn-Off Delay Time
- 35 ns
- Continuous Drain Current (ID)
- 25A
- Gate to Source Voltage (Vgs)
- 20V
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for Renesas HAT2267H-EL-E.
ConflictMineralStatement:
HAT2267H-EL-E Overview
The maximum input capacitance of this device is 2150pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 25A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (6V 10V), this device helps reduce its power consumption.
HAT2267H-EL-E Features
a continuous drain current (ID) of 25A
the turn-off delay time is 35 ns
HAT2267H-EL-E Applications
There are a lot of Renesas Electronics America
HAT2267H-EL-E applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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