Renesas HAT2172H-EL-E

Manufacturer No:

HAT2172H-EL-E

Manufacturer:

Renesas

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 7.5m ? @ 15A, 10V ±20V 2420pF @ 10V 32nC @ 10V 40V SC-100, SOT-669

Quantity:

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HAT2172H-EL-E information

Renesas HAT2172H-EL-E technical specifications, attributes, parameters and parts with similar specifications to Renesas HAT2172H-EL-E.

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Number of Pins
5

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2005

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

ECCN Code
EAR99

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Pin Count
5

JESD-30 Code
R-PSSO-G4

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
20W Tc

Case Connection
DRAIN

Turn On Delay Time
12 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
7.5m ? @ 15A, 10V

Vgs(th) (Max) @ Id
3V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
2420pF @ 10V

Current - Continuous Drain (Id) @ 25°C
30A Ta

Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V

Rise Time
20ns

Drain to Source Voltage (Vdss)
40V

Drive Voltage (Max Rds On,Min Rds On)
7V 10V

Vgs (Max)
±20V

Fall Time (Typ)
4.5 ns

Turn-Off Delay Time
38 ns

Continuous Drain Current (ID)
30A

Gate to Source Voltage (Vgs)
20V

Drain-source On Resistance-Max
0.0092Ohm

DS Breakdown Voltage-Min
40V

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Renesas HAT2172H-EL-E.

Datasheets:

renesaselectronicsamerica-hat2172hele-datasheets-5331.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

HAT2172H-EL-E Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2420pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (7V 10V).

HAT2172H-EL-E Features

a continuous drain current (ID) of 30A
the turn-off delay time is 38 ns
a 40V drain to source voltage (Vdss)

HAT2172H-EL-E Applications

There are a lot of Renesas Electronics America
HAT2172H-EL-E applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

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