Renesas HAT2170H-EL-E
Manufacturer No:
HAT2170H-EL-E
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.2m ? @ 22.5A, 10V ±20V 4650pF @ 10V 62nC @ 10V 40V SC-100, SOT-669
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HAT2170H-EL-E information
Renesas HAT2170H-EL-E technical specifications, attributes, parameters and parts with similar specifications to Renesas HAT2170H-EL-E.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Number of Pins
- 5
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 20
- Pin Count
- 5
- JESD-30 Code
- R-PSSO-G4
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- Turn On Delay Time
- 15 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 4.2m ? @ 22.5A, 10V
- Vgs(th) (Max) @ Id
- 3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 4650pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 45A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 62nC @ 10V
- Rise Time
- 43ns
- Drain to Source Voltage (Vdss)
- 40V
- Drive Voltage (Max Rds On,Min Rds On)
- 7V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 7.1 ns
- Turn-Off Delay Time
- 44 ns
- Continuous Drain Current (ID)
- 45A
- Gate to Source Voltage (Vgs)
- 20V
- Pulsed Drain Current-Max (IDM)
- 180A
- DS Breakdown Voltage-Min
- 40V
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Renesas HAT2170H-EL-E.
ConflictMineralStatement:
HAT2170H-EL-E Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4650pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 44 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 180A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (7V 10V).
HAT2170H-EL-E Features
a continuous drain current (ID) of 45A
the turn-off delay time is 44 ns
based on its rated peak drain current 180A.
a 40V drain to source voltage (Vdss)
HAT2170H-EL-E Applications
There are a lot of Renesas Electronics America
HAT2170H-EL-E applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
User Guide
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Step1：Prepare product
Step2：Desiccant Protection
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Step4：Individual Package
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Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
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