Renesas HAT2165H-EL-E

Manufacturer No:

HAT2165H-EL-E

Manufacturer:

Renesas

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.3m ? @ 27.5A, 10V ±20V 5180pF @ 10V 33nC @ 4.5V 30V SC-100, SOT-669

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HAT2165H-EL-E information

Renesas HAT2165H-EL-E technical specifications, attributes, parameters and parts with similar specifications to Renesas HAT2165H-EL-E.

Type
Parameter

Factory Lead Time
16 Weeks

Contact Plating
Gold

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Number of Pins
5

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2005

JESD-609 Code
e4

Pbfree Code
yes

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

ECCN Code
EAR99

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
20

Pin Count
5

JESD-30 Code
R-PSSO-G4

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
30W Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
30W

Case Connection
DRAIN

Turn On Delay Time
13 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
3.3m ? @ 27.5A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
5180pF @ 10V

Current - Continuous Drain (Id) @ 25°C
55A Ta

Gate Charge (Qg) (Max) @ Vgs
33nC @ 4.5V

Rise Time
65ns

Drain to Source Voltage (Vdss)
30V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
9.5 ns

Turn-Off Delay Time
60 ns

Continuous Drain Current (ID)
55A

Gate to Source Voltage (Vgs)
20V

Pulsed Drain Current-Max (IDM)
220A

DS Breakdown Voltage-Min
30V

Download datasheets and manufacturer documentation for Renesas HAT2165H-EL-E.

Datasheets:

renesaselectronicsamerica-hat2165hele-datasheets-1380.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

HAT2165H-EL-E Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5180pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 55A amps.It is [60 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 220A.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

HAT2165H-EL-E Features

a continuous drain current (ID) of 55A
the turn-off delay time is 60 ns
based on its rated peak drain current 220A.
a 30V drain to source voltage (Vdss)

HAT2165H-EL-E Applications

There are a lot of Renesas Electronics America
HAT2165H-EL-E applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

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