Renesas HAT2131R-EL-E
Manufacturer No:
HAT2131R-EL-E
Manufacturer:
Renesas
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3 ? @ 450mA, 10V ±20V 460pF @ 25V 20nC @ 10V 350V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :6386
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
HAT2131R-EL-E Information
Renesas HAT2131R-EL-E technical specifications, attributes, parameters and parts with similar specifications to Renesas HAT2131R-EL-E.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2009
- Pbfree Code
- yes
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 8
Download datasheets and manufacturer documentation for Renesas HAT2131R-EL-E.
ConflictMineralStatement:
HAT2131R-EL-E Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 460pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 900mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.9A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 7.2A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 350V in order to maintain normal operation.Operating this transistor requires a 350V drain to source voltage (Vdss).By using drive voltage (4V 10V), this device helps reduce its overall power consumption.
HAT2131R-EL-E Features
a continuous drain current (ID) of 900mA
based on its rated peak drain current 7.2A.
a 350V drain to source voltage (Vdss)
HAT2131R-EL-E Applications
There are a lot of Renesas Electronics America
HAT2131R-EL-E applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
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In-stock SKU
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