

Renesas HAT2116H-EL-E
Manufacturer No:
HAT2116H-EL-E
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.2m ? @ 15A, 10V ±20V 1650pF @ 10V 26nC @ 10V SC-100, SOT-669
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HAT2116H-EL-E information
Renesas HAT2116H-EL-E technical specifications, attributes, parameters and parts with similar specifications to Renesas HAT2116H-EL-E.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Number of Pins
- 5
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 30A
- Time@Peak Reflow Temperature-Max (s)
- 20
- Pin Count
- 5
- JESD-30 Code
- R-PSSO-G4
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 15W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 15W
- Case Connection
- DRAIN
- Turn On Delay Time
- 15 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 8.2m ? @ 15A, 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 1650pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 30A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 26nC @ 10V
- Rise Time
- 55ns
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 11 ns
- Turn-Off Delay Time
- 48 ns
- Continuous Drain Current (ID)
- 30A
- Gate to Source Voltage (Vgs)
- 20V
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for Renesas HAT2116H-EL-E.
Datasheets:
ConflictMineralStatement:
HAT2116H-EL-E Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1650pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 48 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
HAT2116H-EL-E Features
a continuous drain current (ID) of 30A
the turn-off delay time is 48 ns
HAT2116H-EL-E Applications
There are a lot of Renesas Electronics America
HAT2116H-EL-E applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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