

Renesas HAT2099H-EL-E
Manufacturer No:
HAT2099H-EL-E
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.7m ? @ 25A, 10V ±20V 4750pF @ 10V 75nC @ 10V SC-100, SOT-669
Quantity:
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In Stock :Available
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HAT2099H-EL-E information
Renesas HAT2099H-EL-E technical specifications, attributes, parameters and parts with similar specifications to Renesas HAT2099H-EL-E.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Number of Pins
- 5
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 50A
- Time@Peak Reflow Temperature-Max (s)
- 20
- Pin Count
- 5
- JESD-30 Code
- R-PSSO-G4
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 30W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 30W
- Case Connection
- DRAIN
- Turn On Delay Time
- 26 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 3.7m ? @ 25A, 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 4750pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 50A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 75nC @ 10V
- Rise Time
- 60ns
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 26 ns
- Turn-Off Delay Time
- 85 ns
- Continuous Drain Current (ID)
- 50A
- Gate to Source Voltage (Vgs)
- 20V
- Drain-source On Resistance-Max
- 0.0073Ohm
- Pulsed Drain Current-Max (IDM)
- 200A
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Renesas HAT2099H-EL-E.
Datasheets:
ConflictMineralStatement:
HAT2099H-EL-E Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4750pF @ 10V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 200A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 26 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
HAT2099H-EL-E Features
a continuous drain current (ID) of 50A
the turn-off delay time is 85 ns
based on its rated peak drain current 200A.
HAT2099H-EL-E Applications
There are a lot of Renesas Electronics America
HAT2099H-EL-E applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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