

Renesas HAT1069C-EL-E
Manufacturer No:
HAT1069C-EL-E
Manufacturer:
Package:
6-SMD, Flat Leads
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 52m ? @ 1.5A, 4.5V ±8V 1380pF @ 10V 16nC @ 4.5V 12V 6-SMD, Flat Leads
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HAT1069C-EL-E information
Renesas HAT1069C-EL-E technical specifications, attributes, parameters and parts with similar specifications to Renesas HAT1069C-EL-E.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 6-SMD, Flat Leads
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- JESD-609 Code
- e6
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Bismuth (Sn/Bi)
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Peak Reflow Temperature (Cel)
- 260
- Reach Compliance Code
- compliant
- Time@Peak Reflow Temperature-Max (s)
- 20
- Pin Count
- 6
- JESD-30 Code
- R-PDSO-F6
- Qualification Status
- Not Qualified
- Number of Elements
- 1
- Power Dissipation-Max
- 900mW Ta
- Operating Mode
- ENHANCEMENT MODE
- FET Type
- P-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 52m ? @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id
- 1.2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 1380pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 4A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 4.5V
- Drain to Source Voltage (Vdss)
- 12V
- Drive Voltage (Max Rds On,Min Rds On)
- 1.8V 4.5V
- Vgs (Max)
- ±8V
- Drain Current-Max (Abs) (ID)
- 4A
- Drain-source On Resistance-Max
- 0.093Ohm
- DS Breakdown Voltage-Min
- 12V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Renesas HAT1069C-EL-E.
HAT1069C-EL-E Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1380pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 4A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 12V in order to maintain normal operation.Operating this transistor requires a 12V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
HAT1069C-EL-E Features
a 12V drain to source voltage (Vdss)
HAT1069C-EL-E Applications
There are a lot of Renesas Electronics America
HAT1069C-EL-E applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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