Renesas HAF2011L
Manufacturer No:
HAF2011L
Manufacturer:
Renesas
Package:
Description:
Nch Thermal FET 60V 40A 20mohm TO-262 / I2PAK
Quantity:
In Stock :2838
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
HAF2011L Information
Renesas HAF2011L technical specifications, attributes, parameters and parts with similar specifications to Renesas HAF2011L.
- Type
- Parameter
- Lead Count (#)
- 4
- Carrier Type
- Bag
- Application
- Industrial, Automotive Use
- Automotive Qual.
- Yes
- Channels (#)
- 1
- Function
- Thermal FETs
- ID (A)
- 40
- Lead Compliant
- No
- Mounting Type
- Through Hole
- Nch/Pch
- Nch
- Type
- Parameter
- Pb (Lead) Free
- Yes
- Pch (W)
- 50
- Pkg. Type
- LDPAK(L)
- Qualification Level
- Automotive
- RDS (ON) (Max) @10V or 8V (mohm)
- 20
- RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm)
- 33
- RDS (ON) (Typical) @ 10V / 8V (mohm)
- 15
- RDS (on) (Max) @4V to 4.5V (mohm)
- 33
- RDS (on) (Max) @8V to 10V (mohm)
- 20
- RDS (on) (ohm) typ. @4V to 4.5V (mohm)
- 25
Download datasheets and manufacturer documentation for Renesas HAF2011L.
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
- Logic level operation (4 to 6 V Gate drive)
- High endurance capability against to the short circuit
- Built-in the over temperature shut-down circuit
- Latch type shut-down operation (Need 0 voltage recovery)
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
