Renesas H7N1002LS-E
Renesas H7N1002LS-E

Renesas H7N1002LS-E

Manufacturer No:

H7N1002LS-E

Manufacturer:

Renesas

Package:

SC-83

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10mOhm @ 37.5A, 10V ±20V 9700pF @ 10V 155nC @ 10V 100V SC-83

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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H7N1002LS-E information

Renesas H7N1002LS-E technical specifications, attributes, parameters and parts with similar specifications to Renesas H7N1002LS-E.

  • Type
  • Parameter
  • Factory Lead Time
  • 16 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • SC-83
  • Number of Pins
  • 3
  • Supplier Device Package
  • 4-LDPAK
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2006
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Max Operating Temperature
  • 150°C
  • Min Operating Temperature
  • -55°C
  • Technology
  • MOSFET (Metal Oxide)
  • Number of Elements
  • 1
  • Power Dissipation-Max
  • 100W Tc
  • Power Dissipation
  • 100W
  • FET Type
  • N-Channel
  • Rds On (Max) @ Id, Vgs
  • 10mOhm @ 37.5A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds
  • 9700pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
  • 75A Ta
  • Gate Charge (Qg) (Max) @ Vgs
  • 155nC @ 10V
  • Drain to Source Voltage (Vdss)
  • 100V
  • Drive Voltage (Max Rds On,Min Rds On)
  • 4.5V 10V
  • Continuous Drain Current (ID)
  • 75A
  • Gate to Source Voltage (Vgs)
  • 20V
  • Input Capacitance
  • 9.7nF
  • Rds On Max
  • 10 m?
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for Renesas H7N1002LS-E.

Datasheets:

ConflictMineralStatement:

H7N1002LS-E Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9700pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

H7N1002LS-E Features


a continuous drain current (ID) of 75A
a 100V drain to source voltage (Vdss)


H7N1002LS-E Applications


There are a lot of Renesas Electronics America
H7N1002LS-E applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

User Guide

PURCHASE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

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Step6：Packaging Box

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SHIPPING METHOD

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DELIVERY TIME

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2. For in-stock parts, orders normally could be shipped out within 1-2days.

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