

SemiQ GP2T040A120H
Manufacturer No:
GP2T040A120H
Manufacturer:
Package:
TO-247-4
Description:
SiC (Silicon Carbide Junction Transistor) N-Channel 52mOhm @ 40A, 20V +25V, -10V 3192 pF @ 1000 V 118 nC @ 20 V 1200 V TO-247-4
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GP2T040A120H information
SemiQ GP2T040A120H technical specifications, attributes, parameters and parts with similar specifications to SemiQ GP2T040A120H.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-247-4
- Supplier Device Package
- TO-247-4
- Mfr
- SemiQ
- Package
- Tube
- Product Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Power Dissipation (Max)
- 322W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- SiC (Silicon Carbide Junction Transistor)
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 52mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id
- 4V @ 10mA
- Input Capacitance (Ciss) (Max) @ Vds
- 3192 pF @ 1000 V
- Current - Continuous Drain (Id) @ 25°C
- 63A (Tc)
- Gate Charge (Qg) (Max) @ Vgs
- 118 nC @ 20 V
- Drain to Source Voltage (Vdss)
- 1200 V
- Vgs (Max)
- +25V, -10V
Download datasheets and manufacturer documentation for SemiQ GP2T040A120H.
GP2T040A120H Overview
The maximum input capacitance of this device is 3192 pF @ 1000 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 1200 V in order to operate.
GP2T040A120H Features
a 1200 V drain to source voltage (Vdss)
GP2T040A120H Applications
There are a lot of SemiQ
GP2T040A120H applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
User Guide
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GP2T040A120H Relevant information
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