

SemiQ GP2M023A050N
Manufacturer No:
GP2M023A050N
Manufacturer:
Package:
TO-3P-3, SC-65-3
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 220mOhm @ 11.5A, 10V ±30V 3270pF @ 25V 64nC @ 10V 500V TO-3P-3, SC-65-3
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GP2M023A050N information
SemiQ GP2M023A050N technical specifications, attributes, parameters and parts with similar specifications to SemiQ GP2M023A050N.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Supplier Device Package
- TO-3PN
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 347W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 220mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 3270pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 23A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 64nC @ 10V
- Drain to Source Voltage (Vdss)
- 500V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
Download datasheets and manufacturer documentation for SemiQ GP2M023A050N.
Datasheets:
GP2M023A050N Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3270pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
GP2M023A050N Features
a 500V drain to source voltage (Vdss)
GP2M023A050N Applications
There are a lot of SemiQ
GP2M023A050N applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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