GeneSiC Semiconductor GA16JT17-247
GeneSiC Semiconductor GA16JT17-247

GeneSiC Semiconductor GA16JT17-247

Manufacturer No:

GA16JT17-247

Manufacturer:

GeneSiC Semiconductor

Package:

TO-247-3

Description:

SiC (Silicon Carbide Junction Transistor) Tube 110m ? @ 16A 1700V TO-247-3

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

Price not displayed? Please send an RFQ, and we will respond immediately.

GA16JT17-247 information

GeneSiC Semiconductor GA16JT17-247 technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor GA16JT17-247.

  • Type
  • Parameter
  • Factory Lead Time
  • 18 Weeks
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-247-3
  • Number of Pins
  • 3
  • Operating Temperature
  • 175°C TJ
  • Packaging
  • Tube
  • Published
  • 2013
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • ECCN Code
  • EAR99
  • Subcategory
  • Other Transistors
  • Technology
  • SiC (Silicon Carbide Junction Transistor)
  • Power Dissipation-Max
  • 282W Tc
  • Element Configuration
  • Single
  • Rds On (Max) @ Id, Vgs
  • 110m ? @ 16A
  • Current - Continuous Drain (Id) @ 25°C
  • 16A Tc 90°C
  • Drain to Source Voltage (Vdss)
  • 1700V
  • Polarity/Channel Type
  • N-CHANNEL
  • Continuous Drain Current (ID)
  • 16A
  • Drain to Source Breakdown Voltage
  • 1.7kV
  • REACH SVHC
  • No SVHC
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for GeneSiC Semiconductor GA16JT17-247.

Datasheets:

GA16JT17-247 Overview


This device conducts a continuous drain current (ID) of 16A, which is the maximum continuous current transistor can conduct.Using VGS=1.7kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1.7kV (that is, no charge flow from drain to source).This transistor requires a drain-source voltage (Vdss) of 1700V.

GA16JT17-247 Features


a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 1.7kV voltage
a 1700V drain to source voltage (Vdss)


GA16JT17-247 Applications


There are a lot of GeneSiC Semiconductor
GA16JT17-247 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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