

DIODES FZT651QTC
Manufacturer No:
FZT651QTC
Manufacturer:
Package:
QFN
Description:
NPN -55°C ~ 150°C (TJ) 100nA (ICBO) QFN Bulk Surface Mount
Quantity:
Delivery:




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FZT651QTC information
DIODES FZT651QTC technical specifications, attributes, parameters and parts with similar specifications to DIODES FZT651QTC.
- Type
- Parameter
- Package / Case
- QFN
- Mounting Type
- Surface Mount
- Supplier Device Package
- SOT-223-3
- Mounting Style
- SMD/SMT
- Standard Frequency
- 72
- Operating Temp Range
- -40C to 85C
- Operating Supply Voltage (Max)
- 1.98(V)
- Operating Supply Voltage (Min)
- 1.62(V)
- Symmetry Max
- 55(%)
- Programmable
- No
- Qualification
- AEC-Q101
- Transistor Polarity
- NPN
- Emitter- Base Voltage VEBO
- 7 V
- Pd - Power Dissipation
- 2 W
- Maximum Operating Temperature
- + 150 C
- DC Collector/Base Gain hfe Min
- 100
- Unit Weight
- 0.003951 oz
- Minimum Operating Temperature
- - 55 C
- Factory Pack Quantity:Factory Pack Quantity
- 4000
- Gain Bandwidth Product fT
- 175 MHz
- Manufacturer
- Diodes Incorporated
- Collector- Base Voltage VCBO
- 80 V
- Brand
- Diodes Incorporated
- Maximum DC Collector Current
- 3 A
- RoHS Status
- Collector- Emitter Voltage VCEO Max
- 60 V
- Package
- Tape & Reel (TR)
- Mfr
- Diodes Incorporated
- Product Status
- Active
- Packaging
- Bulk
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- Automotive, AEC-Q101
- Type
- CLOCK OSCILLATOR
- Subcategory
- Transistors
- Technology
- Si
- Frequency Stability
- ±25(ppm)
- Configuration
- Single
- Load Capacitance
- 15(pF)
- Power Dissipation
- 3W
- Power - Max
- 2 W
- Product Type
- BJTs - Bipolar Transistors
- Transistor Type
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 500mA, 2V
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 300mA, 3A
- Voltage - Collector Emitter Breakdown (Max)
- 60 V
- Current - Collector (Ic) (Max)
- 3 A
Download datasheets and manufacturer documentation for DIODES FZT651QTC.
FZT651QTC Overview
DC current gain in this device equals 100 @ 500mA, 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 300mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 3A to achieve high efficiency.As a result, the part has a transition frequency of 175MHz.Product comes in SOT-223-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
FZT651QTC Features
the DC current gain for this device is 100 @ 500mA, 2V
the vce saturation(Max) is 600mV @ 300mA, 3A
a transition frequency of 175MHz
the supplier device package of SOT-223-3
FZT651QTC Applications
There are a lot of Diodes
FZT651QTC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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