Rochester FQU10N20LTU
Manufacturer No:
FQU10N20LTU
Manufacturer:
Rochester
Package:
TO-251-3 Short Leads, IPak, TO-251AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 360m ? @ 3.8A, 10V ±20V 830pF @ 25V 17nC @ 5V 200V TO-251-3 Short Leads, IPak, TO-251AA
Quantity:
In Stock :7845
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQU10N20LTU Information
Rochester FQU10N20LTU technical specifications, attributes, parameters and parts with similar specifications to Rochester FQU10N20LTU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT APPLICABLE
- Pin Count
- 3
- JESD-30 Code
- R-PSIP-T3
Download datasheets and manufacturer documentation for Rochester FQU10N20LTU.
FQU10N20LTU Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 180 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 830pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [7.6A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 30.4A.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
FQU10N20LTU Features
the avalanche energy rating (Eas) is 180 mJ
based on its rated peak drain current 30.4A.
a 200V drain to source voltage (Vdss)
FQU10N20LTU Applications
There are a lot of Rochester Electronics, LLC
FQU10N20LTU applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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