Rochester FQPF9N50YDTU
Manufacturer No:
FQPF9N50YDTU
Manufacturer:
Rochester
Package:
TO-220-3 Full Pack, Formed Leads
Description:
MOSFET (Metal Oxide) N-Channel Tube 730m ? @ 2.65A, 10V ±30V 1.45pF @ 25V 36nC @ 10V 500V TO-220-3 Full Pack, Formed Leads
Quantity:
In Stock :3138
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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FQPF9N50YDTU Information
Rochester FQPF9N50YDTU technical specifications, attributes, parameters and parts with similar specifications to Rochester FQPF9N50YDTU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack, Formed Leads
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
Download datasheets and manufacturer documentation for Rochester FQPF9N50YDTU.
FQPF9N50YDTU Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 360 mJ.A device's maximum input capacitance is 1.45pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 5.3A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 21A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FQPF9N50YDTU Features
the avalanche energy rating (Eas) is 360 mJ
based on its rated peak drain current 21A.
a 500V drain to source voltage (Vdss)
FQPF9N50YDTU Applications
There are a lot of Rochester Electronics, LLC
FQPF9N50YDTU applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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