Rochester FQPF8N60CYDTU
Manufacturer No:
FQPF8N60CYDTU
Manufacturer:
Rochester
Package:
TO-220-3 Full Pack, Formed Leads
Description:
MOSFET (Metal Oxide) N-Channel Tube 1.2 ? @ 3.75A, 10V ±30V 1.255pF @ 25V 36nC @ 10V 600V TO-220-3 Full Pack, Formed Leads
Quantity:
In Stock :9285
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQPF8N60CYDTU Information
Rochester FQPF8N60CYDTU technical specifications, attributes, parameters and parts with similar specifications to Rochester FQPF8N60CYDTU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack, Formed Leads
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Additional Feature
- FAST SWITCHING
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
Download datasheets and manufacturer documentation for Rochester FQPF8N60CYDTU.
FQPF8N60CYDTU Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 230 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.255pF @ 25V.7.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 30A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
FQPF8N60CYDTU Features
the avalanche energy rating (Eas) is 230 mJ
based on its rated peak drain current 30A.
a 600V drain to source voltage (Vdss)
FQPF8N60CYDTU Applications
There are a lot of Rochester Electronics, LLC
FQPF8N60CYDTU applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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