Rochester FQPF6N60
Manufacturer No:
FQPF6N60
Manufacturer:
Rochester
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 1.5 ? @ 1.8A, 10V ±30V 1pF @ 25V 25nC @ 10V 600V TO-220-3 Full Pack
Quantity:
In Stock :4167
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQPF6N60 Information
Rochester FQPF6N60 technical specifications, attributes, parameters and parts with similar specifications to Rochester FQPF6N60.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT APPLICABLE
- Pin Count
- 3
Download datasheets and manufacturer documentation for Rochester FQPF6N60.
FQPF6N60 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 440 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 3.6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 14.4A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQPF6N60 Features
the avalanche energy rating (Eas) is 440 mJ
based on its rated peak drain current 14.4A.
a 600V drain to source voltage (Vdss)
FQPF6N60 Applications
There are a lot of Rochester Electronics, LLC
FQPF6N60 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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