Rochester FQPF6N40CT
Manufacturer No:
FQPF6N40CT
Manufacturer:
Rochester
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 1 ? @ 3A, 10V ±30V 625pF @ 25V 20nC @ 10V 400V TO-220-3 Full Pack
Quantity:
In Stock :6794
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQPF6N40CT Information
Rochester FQPF6N40CT technical specifications, attributes, parameters and parts with similar specifications to Rochester FQPF6N40CT.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT APPLICABLE
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
Download datasheets and manufacturer documentation for Rochester FQPF6N40CT.
FQPF6N40CT Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 270 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 625pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 6A.Pulsed drain current is maximum rated peak drain current 24A.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQPF6N40CT Features
the avalanche energy rating (Eas) is 270 mJ
based on its rated peak drain current 24A.
a 400V drain to source voltage (Vdss)
FQPF6N40CT Applications
There are a lot of Rochester Electronics, LLC
FQPF6N40CT applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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