Rochester FQPF3N80CYDTU
Manufacturer No:
FQPF3N80CYDTU
Manufacturer:
Rochester
Package:
TO-220-3 Full Pack, Formed Leads
Description:
MOSFET (Metal Oxide) N-Channel Tube 4.8 ? @ 1.5A, 10V ±30V 705pF @ 25V 16.5nC @ 10V 800V TO-220-3 Full Pack, Formed Leads
Quantity:
In Stock :3868
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQPF3N80CYDTU Information
Rochester FQPF3N80CYDTU technical specifications, attributes, parameters and parts with similar specifications to Rochester FQPF3N80CYDTU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack, Formed Leads
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)
- NOT APPLICABLE
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
- Qualification Status
- COMMERCIAL
Download datasheets and manufacturer documentation for Rochester FQPF3N80CYDTU.
FQPF3N80CYDTU Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 320 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 705pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [3A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 12A.The DS breakdown voltage should be maintained above 800V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQPF3N80CYDTU Features
the avalanche energy rating (Eas) is 320 mJ
based on its rated peak drain current 12A.
a 800V drain to source voltage (Vdss)
FQPF3N80CYDTU Applications
There are a lot of Rochester Electronics, LLC
FQPF3N80CYDTU applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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