ONSEMI FQPF13N10L
Manufacturer No:
FQPF13N10L
Manufacturer:
ONSEMI
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 180m ? @ 4.35A, 10V ±20V 520pF @ 25V 12nC @ 5V 100V TO-220-3 Full Pack
Quantity:
In Stock :4454
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 16 - Wed, Jun 17, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQPF13N10L Information
ONSEMI FQPF13N10L technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQPF13N10L.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- QFET®
- Published
- 2000
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 30W Tc
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 180m ? @ 4.35A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 520pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 8.7A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 5V
- Drain to Source Voltage (Vdss)
- 100V
- Drive Voltage (Max Rds On,Min Rds On)
- 5V 10V
- Vgs (Max)
- ±20V
Download datasheets and manufacturer documentation for ONSEMI FQPF13N10L.
Datasheets:
FQPF13N10L Overview
The maximum input capacitance of this device is 520pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.
FQPF13N10L Features
a 100V drain to source voltage (Vdss)
FQPF13N10L Applications
There are a lot of ON Semiconductor
FQPF13N10L applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
