ONSEMI FQP9N90C
Manufacturer No:
FQP9N90C
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
Power MOSFET, N-Channel, QFET<sup>®</sup>, 900 V, 8.0 A, 1.4 Ω, TO-220
Quantity:
In Stock :7886
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQP9N90C Information
ONSEMI FQP9N90C technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQP9N90C.
- Type
- Parameter
- Package Name
- TO-220
- Coss Typ (pF)
- 175
- Package Type
- TO-220-3
- Case Outline
- 340AT
- MSL Temp (°C)
- 0
- V(BR)DSS Min (V)
- 900
- Qg Typ @ VGS = 10 V (nC)
- 45
- Vgs(th) Max (V)
- 5
- ID Max (A)
- 8
- Qgd Typ @ VGS = 4.5 V (nC)
- 18
- Type
- Parameter
- Container Qty.
- 1000
- Silicon Family
- PowerTrench® T1
- Gate Level
- Standard
- Wide SOA Mosfets
- 0
- VGS Max (V)
- ±30
- Configuration
- Single
- RDS(on) Max @ VGS = 4.5 V (mΩ)
- -
- Crss Typ (pF)
- 14
- OPN in older Technology
- 0
- RDS(on) Max @ VGS = 10 V (mΩ)
- 1400
Download datasheets and manufacturer documentation for ONSEMI FQP9N90C.
Datasheet:
Package Drawing:
This N-Channel enhancement mode power MOSFET is produced using onsemi Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Application
- Lighting
Feature
- 8A, 900V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 4A
- Low gate charge ( Typ. 45nC)
- Low Crss ( Typ. 14pF)
- 100% avalanche tested
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
