ONSEMI FQP47P06_SW82049
Manufacturer No:
FQP47P06_SW82049
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) P-Channel Tube 26mOhm @ 23.5A, 10V ±25V 3600pF @ 25V 110nC @ 10V 60V TO-220-3
Quantity:
In Stock :1935
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQP47P06_SW82049 Information
ONSEMI FQP47P06_SW82049 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQP47P06_SW82049.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220-3
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- QFET®
- Published
- 2013
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Power Dissipation-Max
- 160W Tc
- FET Type
- P-Channel
- Rds On (Max) @ Id, Vgs
- 26mOhm @ 23.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 3600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 47A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 110nC @ 10V
- Drain to Source Voltage (Vdss)
- 60V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±25V
Download datasheets and manufacturer documentation for ONSEMI FQP47P06_SW82049.
FQP47P06_SW82049 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3600pF @ 25V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQP47P06_SW82049 Features
a 60V drain to source voltage (Vdss)
FQP47P06_SW82049 Applications
There are a lot of ON Semiconductor
FQP47P06_SW82049 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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