ONSEMI FQP20N06TSTU
Manufacturer No:
FQP20N06TSTU
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 60m ? @ 10A, 10V ±25V 590pF @ 25V 15nC @ 10V TO-220-3
Quantity:
In Stock :5802
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQP20N06TSTU Information
ONSEMI FQP20N06TSTU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQP20N06TSTU.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- QFET®
- Published
- 2013
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Voltage - Rated DC
- 60V
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 20A
- Power Dissipation-Max
- 53W Tc
- Element Configuration
- Single
- Power Dissipation
- 53W
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 60m ? @ 10A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 590pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 20A Tc
Download datasheets and manufacturer documentation for ONSEMI FQP20N06TSTU.
ReachStatement:
FQP20N06TSTU Overview
A device's maximal input capacitance is 590pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).
FQP20N06TSTU Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
FQP20N06TSTU Applications
There are a lot of ON Semiconductor
FQP20N06TSTU applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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Listed Part Number
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