ONSEMI FQP11P06
Manufacturer No:
FQP11P06
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
Power MOSFET, P-Channel, QFET<sup>®</sup>, -60 V, -11.4 A, 175 mΩ, TO-220
Quantity:
In Stock :8150
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQP11P06 Information
ONSEMI FQP11P06 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQP11P06.
- Type
- Parameter
- Crss Typ (pF)
- 45
- Gate Level
- Standard
- Configuration
- Single
- OPN in older Technology
- 0
- Wide SOA Mosfets
- 0
- RDS(on) Max @ VGS = 10 V (mΩ)
- 185
- Package Type
- TO-220-3
- MSL Temp (°C)
- 0
- Coss Typ (pF)
- 195
- Silicon Family
- PowerTrench® T1
- Type
- Parameter
- Type
- Low-Medium Voltage
- Vgs (V)
- -4
- RDS(on) Max @ VGS = 4.5 V (mΩ)
- -
- Qg Typ @ VGS = 4.5 V (nC)
- -
- Qgd Typ @ VGS = 4.5 V (nC)
- 6.3
- Container Qty.
- 1000
- Channel Polarity
- P-Channel
- Package Name
- TO-220
- PD Max (W)
- 53
- Case Outline
- 340AT
Download datasheets and manufacturer documentation for ONSEMI FQP11P06.
Datasheet:
Package Drawing:
These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for lowvoltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Application
- DC/DC Converters
- High Efficiency Switching
- Power Management
Feature
- -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A
- Low Gate Charge (Typ. 13 nC)
- Low Crss (Typ. 45 pF)
- 100% Avalanche Tested
- 175ºC Maximum Junction Temperature Rating
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
