Rochester FQNL2N50BBU
Manufacturer No:
FQNL2N50BBU
Manufacturer:
Rochester
Package:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Description:
MOSFET (Metal Oxide) N-Channel Bulk 5.3 ? @ 175mA, 10V ±30V 230pF @ 25V 8nC @ 10V 500V TO-226-3, TO-92-3 Long Body (Formed Leads)
Quantity:
In Stock :4473
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
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Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
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Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQNL2N50BBU Information
Rochester FQNL2N50BBU technical specifications, attributes, parameters and parts with similar specifications to Rochester FQNL2N50BBU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)
- NOT APPLICABLE
- Pin Count
- 3
- JESD-30 Code
- O-PBCY-T3
- Qualification Status
- COMMERCIAL
Download datasheets and manufacturer documentation for Rochester FQNL2N50BBU.
FQNL2N50BBU Overview
The maximum input capacitance of this device is 230pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 0.35A.There is no pulsed drain current maximum for this device based on its rated peak drain current 1.4A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
FQNL2N50BBU Features
based on its rated peak drain current 1.4A.
a 500V drain to source voltage (Vdss)
FQNL2N50BBU Applications
There are a lot of Rochester Electronics, LLC
FQNL2N50BBU applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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