Rochester FQI50N06LTU
Manufacturer No:
FQI50N06LTU
Manufacturer:
Rochester
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 21m ? @ 26.2A, 10V ±20V 1.63pF @ 25V 32nC @ 5V 60V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :6464
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQI50N06LTU Information
Rochester FQI50N06LTU technical specifications, attributes, parameters and parts with similar specifications to Rochester FQI50N06LTU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- QFET®
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Terminal Finish
- NOT SPECIFIED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- JESD-30 Code
- R-PSIP-T3
- Qualification Status
- COMMERCIAL
Download datasheets and manufacturer documentation for Rochester FQI50N06LTU.
FQI50N06LTU Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 990 mJ.A device's maximal input capacitance is 1.63pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 52.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 210A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).
FQI50N06LTU Features
the avalanche energy rating (Eas) is 990 mJ
based on its rated peak drain current 210A.
a 60V drain to source voltage (Vdss)
FQI50N06LTU Applications
There are a lot of Rochester Electronics, LLC
FQI50N06LTU applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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