Rochester FQI10N20CTU
Manufacturer No:
FQI10N20CTU
Manufacturer:
Rochester
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 360m ? @ 4.75A, 10V ±30V 510pF @ 25V 26nC @ 10V 200V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :1730
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQI10N20CTU Information
Rochester FQI10N20CTU technical specifications, attributes, parameters and parts with similar specifications to Rochester FQI10N20CTU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- QFET®
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Type
- Parameter
- Additional Feature
- FAST SWITCHING
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Reach Compliance Code
- unknown
- Pin Count
- 3
- JESD-30 Code
- R-PSIP-T3
- Qualification Status
- COMMERCIAL
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 72W Tc
Download datasheets and manufacturer documentation for Rochester FQI10N20CTU.
FQI10N20CTU Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 210 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 510pF @ 25V.9.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 38A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
FQI10N20CTU Features
the avalanche energy rating (Eas) is 210 mJ
based on its rated peak drain current 38A.
a 200V drain to source voltage (Vdss)
FQI10N20CTU Applications
There are a lot of Rochester Electronics, LLC
FQI10N20CTU applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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