Rochester FQH18N50V2
Manufacturer No:
FQH18N50V2
Manufacturer:
Rochester
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 265m ? @ 10A, 10V ±30V 3.29pF @ 25V 55nC @ 10V 500V TO-247-3
Quantity:
In Stock :9232
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQH18N50V2 Information
Rochester FQH18N50V2 technical specifications, attributes, parameters and parts with similar specifications to Rochester FQH18N50V2.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT APPLICABLE
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
Download datasheets and manufacturer documentation for Rochester FQH18N50V2.
FQH18N50V2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 330 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3.29pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 20A.Pulsed drain current is maximum rated peak drain current 80A.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQH18N50V2 Features
the avalanche energy rating (Eas) is 330 mJ
based on its rated peak drain current 80A.
a 500V drain to source voltage (Vdss)
FQH18N50V2 Applications
There are a lot of Rochester Electronics, LLC
FQH18N50V2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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